MRF7S16150HSR3, MRF7S16150HR3 Datasheet - Freescale Semiconductor

MRF7S16150HSR3 RF Power Field Effect Transistors

Small Ferrite Bead 10 μF, 35 V Electrolytic Capacitor 0.01 μF, 50 V Chip Capacitors 10 pF Chip Capacitors 47 pF Chip Capacitors 22 μF, 35 V Tantalum Capacitors 220 μF, 50 V Electrolytic Capacitor 1 KΩ, 1/4 W Chip Resistor 10 Ω, 1/4 W Chip Resistor Part Number 2743019447 EMVY350ADA100ME55G C1825C103J.

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF7S16150H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for WiMAX base station applications with frequencies up to 1700 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class AB and Class C amplifier applications. Typical WiMAX Performance: VDD = 28 Volts, IDQ = 1500 mA, Pout = 32 Watts Avg., f = 1600 and 1660 MHz, 802.16d, 64 QAM 3/4, .

MRF7S16150HSR3 Features

* Characterized with Series Equivalent Large - Signal Impedance Parameters

* Internally Matched for Ease of Use

* Integrated ESD Protection

* Greater Negative Gate - Source Voltage Range for Improved Class C Operation

* RoHS Compliant

* In Tape and Ree

MRF7S16150HR3_FreescaleSemiconductor.pdf

MRF7S16150HSR3 Datasheet Preview — This datasheet PDF includes multiple part numbers: MRF7S16150HSR3, MRF7S16150HR3. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

MRF7S16150HSR3, MRF7S16150HR3

Manufacturer:

Freescale Semiconductor

File Size:

491.15 KB

Description:

Rf power field effect transistors.

Note:

This datasheet PDF includes multiple part numbers: MRF7S16150HSR3, MRF7S16150HR3.
Please refer to the document for exact specifications by model.

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MRF7S16150HSR3 MRF7S16150HR3 Power Field Effect Transistors Freescale Semiconductor

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