Datasheet Details
| Part number | MRF7S16150HSR3 |
|---|---|
| Manufacturer | Freescale Semiconductor (now NXP Semiconductors) |
| File Size | 491.15 KB |
| Description | RF Power Field Effect Transistors |
| Download | MRF7S16150HSR3 Download (PDF) |
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Overview: www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF7S16150H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for WiMAX base station applications with frequencies up to 1700 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class AB and Class C amplifier applications. • Typical WiMAX Performance: VDD = 28 Volts, IDQ = 1500 mA, Pout = 32 Watts Avg., f = 1600 and 1660 MHz, 802.16d, 64 QAM 3/4, 4 bursts, 7 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. Power Gain — 19.7 dB Drain Efficiency — 25.4% Device Output Signal PAR — 8.2 dB @ 0.01% Probability on CCDF ACPR @ 5.25 MHz Offset — - 47.5 dBc in 0.
Download the MRF7S16150HSR3 datasheet PDF. This datasheet also includes the MRF7S16150HR3 variant, as both parts are published together in a single manufacturer document.
| Part number | MRF7S16150HSR3 |
|---|---|
| Manufacturer | Freescale Semiconductor (now NXP Semiconductors) |
| File Size | 491.15 KB |
| Description | RF Power Field Effect Transistors |
| Download | MRF7S16150HSR3 Download (PDF) |
|
|
|
| Part Number | Description |
|---|---|
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