MRF7S16150HSR3 Datasheet PDF (RF Power Field Effect Transistors) | Download Freescale Semiconductor MRF7S16150HSR3

MRF7S16150HSR3 - RF Power Field Effect Transistors

This page provides the datasheet information for the MRF7S16150HSR3, a member of the MRF7S16150HR3 RF Power Field Effect Transistors family.

Description

Small Ferrite Bead 10 μF, 35 V Electrolytic Capacitor 0.01 μF, 50 V Chip Capacitors 10 pF Chip Capacitors 47 pF Chip Capacitors 22 μF, 35 V Tantalum Capacitors 220 μF, 50 V Electrolytic Capacitor 1 KΩ, 1/4 W Chip Resistor 10 Ω, 1/4 W Chip Resistor Part Number 2743019447 EMVY350ADA100ME55G C1825C103J

Features

Characterized with Series Equivalent Large - Signal Impedance Parameters.
Internally Matched for Ease of Use.
Integrated ESD Protection.
Greater Negative Gate - Source Voltage Range for Improved Class C Operation.
RoHS Compliant.
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF7S16150HR3 MRF7S16150HSR3 1600- 1660 MHz, 32 W AVG. , 28 V WiMAX.

Datasheet Details

Part number	MRF7S16150HSR3
Manufacturer	Freescale Semiconductor
File Size	491.15 KB
Description	RF Power Field Effect Transistors
Datasheet	MRF7S16150HSR3 Datasheet
Additional preview pages of the MRF7S16150HSR3 datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF7S16150H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for WiMAX base station applications with frequencies up to 1700 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class AB and Class C amplifier applications. • Typical WiMAX Performance: VDD = 28 Volts, IDQ = 1500 mA, Pout = 32 Watts Avg., f = 1600 and 1660 MHz, 802.16d, 64 QAM 3/4, 4 bursts, 7 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. Power Gain — 19.7 dB Drain Efficiency — 25.4% Device Output Signal PAR — 8.2 dB @ 0.01% Probability on CCDF ACPR @ 5.25 MHz Offset — - 47.5 dBc in 0.

Published: Jul 16, 2009 |