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MRF1K50H - RF Power LDMOS Transistor

Features

  • High drain--source avalanche energy absorption capability.
  • Unmatched input and output allowing wide frequency range utilization.
  • Device can be used single--ended or in a push--pull configuration.
  • Characterized from 30 to 50 V for ease of use.
  • Suitable for linear.

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Other Datasheets by NXP Semiconductors

Part Number Description
MRF1K50GN RF Power LDMOS Transistors
MRF1K50N RF Power LDMOS Transistors
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NXP Semiconductors Technical Data RF Power LDMOS Transistor High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET This high ruggedness device is designed for use in high VSWR industrial, scientific and medical applications, as well as radio and VHF TV broadcast, sub--GHz aerospace and mobile radio applications. Its unmatched input and output design allows for wide frequency range use from 1.8 to 500 MHz. Typical Performance: VDD = 50 Vdc Frequency (MHz) Signal Type Pout (W) Gps (dB) ηD (%) 27 81.36 (1) 87.5–108 (2,3) 230 (4) CW CW CW Pulse (100 µsec, 20% Duty Cycle) 1550 CW 1400 CW 1475 CW 1500 Peak 25.9 23.0 23.3 23.7 78.3 75.0 83.4 74.