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MRF13750HS - RF Power LDMOS Transistors

Download the MRF13750HS datasheet PDF. This datasheet also covers the MRF13750H variant, as both devices belong to the same rf power ldmos transistors family and are provided as variant models within a single manufacturer datasheet.

Features

  • Internally input pre--matched for ease of us.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MRF13750H-NXP.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by NXP Semiconductors

Part Number Description
MRF13750H RF Power LDMOS Transistors
MRF101AN RF Power LDMOS Transistors
MRF101BN RF Power LDMOS Transistors
MRF18060BLR3 RF Power Field Effect Transistor
MRF18060BLSR3 RF Power Field Effect Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
NXP Semiconductors Technical Data RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs These 750 W CW transistors are designed for industrial, scientific and medical (ISM) applications in the 700 to 1300 MHz frequency range. The transistors are capable of CW or pulse power in narrowband operation. Typical Performance: VDD = 50 Vdc Frequency (MHz) Signal Type 915 (1) CW 915 (2) Pulse (100 sec, 10% Duty Cycle) 1300 (3) CW Pout (W) 750 850 700 Gps (dB) 19.3 20.5 17.2 D (%) 67.1 69.2 56.0 Load Mismatch/Ruggedness Frequency (MHz) Signal Type VSWR 915 (2) Pulse (100 sec, 10% Duty Cycle) > 10:1 at all Phase Angles Pin (W) 15.9 Peak (3 dB Overdrive) Test Voltage 50 Result No Device Degradation 1.
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