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LLE18100X Datasheet NXP

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NXP · LLE18100X File Size : 60.61KB · 1 hits

Features and Benefits


• Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
• Interdigitated structure provides high emitter efficiency
• Gold metallization realizes very good stability of the characteristics and excellent lifetime
• Multicell geometry gives good balance.

LLE18100X LLE18100X LLE18100X
TAGS
NPN
silicon
planar
epitaxial
microwave
power
transistor
LLE18100X
LLE18150X
LLE18010X

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