Datasheet4U Logo Datasheet4U.com

LLE16045X - NPN microwave power transistor

Description

NPN silicon planar epitaxial microwave power transistor in a SOT437A glued cap metal ceramic flange package, with emitter connected to flange.

QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common emitter class AB amplifier.

Features

  • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR.
  • Interdigitated structure provides high emitter efficiency.
  • Gold metallization realizes very good stability of the characteristics and excellent lifetime.
  • Multicell geometry gives good balance of dissipated power and low thermal resistance.
  • Internal input prematching ensures good stability and allows an easier design of wideband circuits.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
LLE MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS Rubycon

Other Datasheets by NXP Semiconductors

Part Number Description
LLE16120X NPN microwave power transistor
LLE16350X NPN microwave power transistor
LLE15180X NPN microwave power transistor
LLE15370X NPN microwave power transistor
LLE18010X NPN microwave power transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DISCRETE SEMICONDUCTORS DATA SHEET LLE16045X NPN microwave power transistor Product specification Supersedes data of September 1994 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides high emitter efficiency • Gold metallization realizes very good stability of the characteristics and excellent lifetime • Multicell geometry gives good balance of dissipated power and low thermal resistance • Internal input prematching ensures good stability and allows an easier design of wideband circuits.
Published: |