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BUK664R4-55C - N-channel TrenchMOS Intermediate Level FET

BUK664R4-55C Description

DataSheet.in BUK664R4-55C N-channel TrenchMOS intermediate level FET Rev.1 * 17 August 2010 Objective data sheet 1.Product profile 1.1 Gen.
Intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

BUK664R4-55C Features

* AEC Q101 compliant
* Suitable for intermediate level gate drive sources

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N-channel TrenchMOS Intermediate Level FET NXP
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