BUK664R4-55C
description
Intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
- AEC Q101 pliant
- Suitable for intermediate level gate drive sources
- Suitable for thermally demanding environments due to 175 °C rating
1.3 Applications
- 12 V and 24 V automotive systems
- Electric and electro-hydraulic power steering
- Motors, lamps and solenoid control
- Start-Stop micro-hybrid applications
- Transmission control
- Ultra high performance power switching
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
VDS drain-source voltage
Tj ≥ 25 °C; Tj ≤ 175 °C
- - 55 V
ID drain current
VGS = 10 V; Tmb = 25 °C; see Figure 1
[1]
- - 100 A
Ptot total power dissipation
Tmb = 25 °C; see Figure 2
- - 204 W
Static characteristics...
