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BUK625R2-30C Datasheet, NXP

BUK625R2-30C fet equivalent, n-channel trenchmos intermediate level fet.

BUK625R2-30C Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 175.88KB)

BUK625R2-30C Datasheet
BUK625R2-30C Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 175.88KB)

BUK625R2-30C Datasheet

Features and benefits


* AEC Q101 compliant
* Suitable for standard and logic level gate drive sources
* Suitable for thermally demanding environments due to 175 °C rating 1.3 App.

Application

1.2 Features and benefits
* AEC Q101 compliant
* Suitable for standard and logic level gate drive sources

Description

Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high perform.

Image gallery

BUK625R2-30C Page 1 BUK625R2-30C Page 2 BUK625R2-30C Page 3

TAGS

BUK625R2-30C
N-channel
TrenchMOS
intermediate
level
FET
NXP

Manufacturer


NXP (https://www.nxp.com/)

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