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BLS7G2933S-150 Datasheet, NXP

BLS7G2933S-150 transistor equivalent, ldmos s-band radar power transistor.

BLS7G2933S-150 Avg. rating / M : 1.0 rating-11

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BLS7G2933S-150 Datasheet

Features and benefits


* Typical pulsed RF performance at a frequency of 2.9 GHz to 3.3 GHz, a supply voltage of 32 V, an IDq of 100 mA, a tp of 300 μs with δ of 10 %: ‹ Output power = 150 .

Application

in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance Typical RF performance at Tcase = 25 °C; tp = 300 μs; δ =.

Description

150 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance Typical RF performance at Tcase = 25 °C; tp = 300 μs; δ = 10 %; IDq = 100 mA; in a class-AB production test circuit. Mode of .

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TAGS

BLS7G2933S-150
LDMOS
S-band
radar
power
transistor
NXP

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