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BLS7G2729L-350P Datasheet, NXP

BLS7G2729L-350P transistor equivalent, ldmos s-band radar power transistor.

BLS7G2729L-350P Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 134.18KB)

BLS7G2729L-350P Datasheet
BLS7G2729L-350P Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 134.18KB)

BLS7G2729L-350P Datasheet

Features and benefits


* High efficiency
* Excellent ruggedness
* Designed for S-band operation (2.7 GHz to 2.9 GHz)
* Excellent thermal stability
* Easy power control
*.

Application

in the frequency range from 2.7 GHz to 2.9 GHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C; t.

Description

350 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 2.9 GHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 200 mA; in a class-AB production test circu.

Image gallery

BLS7G2729L-350P Page 1 BLS7G2729L-350P Page 2 BLS7G2729L-350P Page 3

TAGS

BLS7G2729L-350P
LDMOS
S-band
radar
power
transistor
NXP

Manufacturer


NXP (https://www.nxp.com/)

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