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BLS7G2730LS-200P Datasheet, NXP

BLS7G2730LS-200P transistor equivalent, ldmos s-band radar power transistor.

BLS7G2730LS-200P Avg. rating / M : 1.0 rating-11

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BLS7G2730LS-200P Datasheet

Features and benefits


* High efficiency
* Excellent ruggedness
* Designed for broadband operation
* Excellent thermal stability
* Easy power control
* Integrated ESD pr.

Application

in the frequency range from 2700 MHz to 3000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C..

Description

200 W LDMOS power transistor for S-band radar applications in the frequency range from 2700 MHz to 3000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C. Test signal f VDS (GHz) (V) Class-AB production test circuit pu.

Image gallery

BLS7G2730LS-200P Page 1 BLS7G2730LS-200P Page 2 BLS7G2730LS-200P Page 3

TAGS

BLS7G2730LS-200P
LDMOS
S-band
radar
power
transistor
NXP

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