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BLP8G10S-45P Datasheet, NXP

BLP8G10S-45P transistor equivalent, power ldmos transistor.

BLP8G10S-45P Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 194.37KB)

BLP8G10S-45P Datasheet
BLP8G10S-45P
Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 194.37KB)

BLP8G10S-45P Datasheet

Features and benefits


* High efficiency
* Excellent ruggedness
* Designed for broadband operation (700 MHz to 1000 MHz)
* Excellent thermal stability
* High power gain
.

Application

at frequencies from 700 MHz to 1000 MHz. Table 1. Application performance Typical RF performance at Tcase = 25 C; IDq .

Description

The BLP8G10S-45P and BLP8G10S-45PG are dual path, 45 W LDMOS power transistors for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Application performance Typical RF performance at Tcase = 25 C; IDq = 224 mA in common so.

Image gallery

BLP8G10S-45P Page 1 BLP8G10S-45P Page 2 BLP8G10S-45P Page 3

TAGS

BLP8G10S-45P
Power
LDMOS
transistor
NXP

Manufacturer


NXP (https://www.nxp.com/)

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