BLL8H1214LS-500 Datasheet, NXP

* Easy power control
* Integrated dual side ESD protection
* High flexibility with respect to pulse formats
* Excellent ruggedness
* High efficiency <.

in the 1.2 GHz to 1.4 GHz range. Table 1. Test information Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10.

500 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range. Table 1. Test information Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 150 mA; in a class-AB production test circuit. Test.

BLL8H1214LS-250

BLL8H1214L-250

BLL8H1214L-500

BLL8H0514-25

BLL8H0514L-130

BLL8H0514LS-130

BLL1214-250

BLL1214-250R

BLL1214-35

BLL1461

BLL2453

BLL2681

BLL2740