Datasheet Details
| Part number | BLL8H1214L-250 |
|---|---|
| Manufacturer | Ampleon |
| File Size | 341.41 KB |
| Description | LDMOS L-band radar power transistor |
| Datasheet |
 BLL8H1214L-250 Datasheet
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General Description
250 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range.
Table 1.
Test information Typical RF performance at Tcase = 25 C; tp = 300 s; = 10 %; IDq = 100 mA; in a class-AB production test circuit.
Key Features
- Easy power control.
- Integrated dual side ESD protection.
- High flexibility with respect to pulse formats.
- Excellent ruggedness.
- High efficiency.
- Excellent thermal stability.
- Designed for broadband operation (1.2 GHz to 1.4 GHz).
- Internally matched for ease of use.
- Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances (RoHS) 1.3.
