BLL8H0514LS-130 datasheet, transistor equivalent, NXP

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Features and benefits

* Easy power control
* Integrated dual side ESD protection
* High flexibility with respect to pulse formats
* Excellent ruggedness
* High efficiency <.

Application

in the 0.5 GHz to 1.4 GHz range. Table 1. Application information Typical RF performance at Tcase = 25 C; IDq = 50 mA;.

Description

130 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range. Table 1. Application information Typical RF performance at Tcase = 25 C; IDq = 50 mA; in a class-AB application circuit. Test signal f tp  VDS PL Gp RLin D.

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