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BLF8G27LS-150V Datasheet, NXP

BLF8G27LS-150V transistor equivalent, power ldmos transistor.

BLF8G27LS-150V Avg. rating / M : 1.0 rating-12

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BLF8G27LS-150V Datasheet

Features and benefits


* Excellent ruggedness
* High efficiency
* Low Rth providing excellent thermal stability
* Decoupling leads to enable improved video bandwidth (60 MHz typ.

Application

at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a com.

Description

150W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circui.

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BLF8G27LS-150V Page 1 BLF8G27LS-150V Page 2 BLF8G27LS-150V Page 3

TAGS

BLF8G27LS-150V
Power
LDMOS
transistor
BLF8G27LS-150GV
BLF8G27LS-100
BLF8G27LS-100GV
NXP

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