logo

BLF8G27LS-100GV Datasheet, Ampleon

BLF8G27LS-100GV transistor equivalent, power ldmos transistor.

BLF8G27LS-100GV Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 382.71KB)

BLF8G27LS-100GV Datasheet
BLF8G27LS-100GV
Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 382.71KB)

BLF8G27LS-100GV Datasheet

Features and benefits


* Excellent ruggedness
* High efficiency
* Low Rth providing excellent thermal stability
* Decoupling leads to enable improved video bandwidth (110 MHz ty.

Application

at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a co.

Description

100 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circ.

Image gallery

BLF8G27LS-100GV Page 1 BLF8G27LS-100GV Page 2 BLF8G27LS-100GV Page 3

TAGS

BLF8G27LS-100GV
Power
LDMOS
transistor
Ampleon

Manufacturer


Ampleon

Related datasheet

BLF8G27LS-100

BLF8G27LS-100P

BLF8G27LS-100V

BLF8G27LS-140

BLF8G27LS-140V

BLF8G27LS-150GV

BLF8G27LS-150V

BLF8G20LS-160V

BLF8G20LS-220

BLF8G20LS-230V

BLF8G20LS-400PGV

BLF8G20LS-400PV

BLF8G22LS-140

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts