Datasheet Summary
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Power LDMOS transistor
Rev. 01
- 11 May 2009 Objective data sheet
1. Product profile
1.1 General description
10 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz
Table 1. Typical performance IDq = 100 mA; Tcase = 25 °C in a mon source class-AB production test circuit. Mode of operation 2-carrier W-CDMA 1-carrier W-CDMA
[1] f (MHz) 2110 to 2170 2110 to 2170
VDS (V) 28 28
PL(AV) (W) 0.7 2
Gp (dB) 18.5 19.3
ηD (%) 15 31
ACPR (dBc)
- 50[1]
- 39[1]
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz.
CAUTION This device is sensitive to...
