BLF6G21-10G
description
10 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz
Table 1. Typical performance IDq = 100 m A; Tcase = 25 °C in a mon source class-AB production test circuit. Mode of operation 2-carrier W-CDMA 1-carrier W-CDMA
[1] f (MHz) 2110 to 2170 2110 to 2170
VDS (V) 28 28
PL(AV) (W) 0.7 2
Gp (d B) 18.5 19.3
ηD (%) 15 31
ACPR (d Bc)
- 50[1]
- 39[1]
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 d B at 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz.
CAUTION This device is sensitive to Electro Static Discharge (ESD). Therefore care should be taken during transport and handling.
1.2 Features
I Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 28 V and an IDq of 100 m A: N Average output power = 0.7 W N Gain = 18.5 d B N Efficiency = 15 % N ACPR =
- 50 d Bc I Typical 1-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 28 V and an IDq of 100 m A:...
