Datasheet4U Logo Datasheet4U.com

BLF6G21-10G - Power LDMOS Transistor

Description

Table 1.

Typical performance IDq = 100 mA; Tcase = 25 °C in a common source class-AB production test circuit.

Features

  • I Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 28 V and an IDq of 100 mA: N Average output power = 0.7 W N Gain = 18.5 dB N Efficiency = 15 % N ACPR =.
  • 50 dBc I Typical 1-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 28 V and an IDq of 100 mA: N Average output power = 2 W N Gain = 19.3 dB N Efficiency = 31 % N ACPR =.
  • 39 dBc I Easy power control I Integrated ESD protection I Excellent rug.

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com BLF6G21-10G Power LDMOS transistor Rev. 01 — 11 May 2009 Objective data sheet 1. Product profile 1.1 General description 10 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz Table 1. Typical performance IDq = 100 mA; Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation 2-carrier W-CDMA 1-carrier W-CDMA [1] f (MHz) 2110 to 2170 2110 to 2170 VDS (V) 28 28 PL(AV) (W) 0.7 2 Gp (dB) 18.5 19.3 ηD (%) 15 31 ACPR (dBc) −50[1] −39[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.
Published: |