BLF10M6LS200 transistor equivalent, power ldmos transistor.
* Easy power control
* Integrated ESD protection
* Excellent ruggedness
* High efficiency
* Excellent thermal stability
* Designed for broadband o.
at frequencies from 700 MHz to 1000 MHz.
Table 1. Typical performance Typical RF performance at Tcase = 25 C in a comm.
200 W LDMOS power transistor for ISM applications at frequencies from 700 MHz to 1000 MHz.
Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
Test signal
f
VDS
PL(AV)
Gp
D.
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