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BLF10M6LS135 Datasheet, NXP

BLF10M6LS135 transistor equivalent, power ldmos transistor.

BLF10M6LS135 Avg. rating / M : 1.0 rating-11

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BLF10M6LS135 Datasheet

Features and benefits


* Easy power control
* Integrated ESD protection
* Enhanced ruggedness
* High efficiency
* Excellent thermal stability
* Designed for broadband op.

Application

at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a clas.

Description

135 W LDMOS power transistor for industrial applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a class-AB production test circuit. Test signal f VDS PL(AV) Gp D (MHz).

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BLF10M6LS135 Page 1 BLF10M6LS135 Page 2 BLF10M6LS135 Page 3

TAGS

BLF10M6LS135
Power
LDMOS
transistor
BLF10M6LS160
BLF10M6LS200
BLF10M6135
NXP

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