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AFM907N Datasheet RF Power LDMOS Transistor

Manufacturer: NXP Semiconductors

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Overview

NXP Semiconductors Technical Data RF Power LDMOS Transistor High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET Designed for handheld two--way radio applications with frequencies from 136 to 941 MHz.

The high gain, ruggedness and wideband performance of this device make it ideal for large--signal, common--source amplifier applications in handheld radio equipment.

Wideband Performance (In 350–520 MHz reference circuit, 7.5 Vdc, TA = 25C, CW) Frequency (MHz) (1) Pin Gps D Pout (W) (dB) (%) (W) 350 0.25 15.2 435 0.25 15.5 520 0.25 15.0 Narrowband Performance (7.5 Vdc, TA = 25C, CW) Frequency (MHz) Gps (dB) D (%) 520 (2) 20.7 73.9 Load Mismatch/Ruggedness 56.6 61.5 64.2 8.4 8.9 7.9 Pout (W) 8.4 Frequency Signal (MHz) Type VSWR Pin (dBm) Test Voltage Result 520 (2) CW > 65:1 at all 21 Phase Angles (3 dB Overdrive) 10.8 No Device Degradation 1.

Key Features

  • Characterized for operation from 136 to 941 MHz.
  • Unmatched input and output allowing wide frequency range utilization.
  • Integrated ESD protection.
  • Integrated stability enhancements.
  • Wideband.
  • full power across the band.
  • Exceptional thermal performance.
  • Extreme ruggedness.
  • High linearity for: TETRA, SSB Typical.

More Datasheets from NXP Semiconductors

Part Number Description
AFM906N RF Power LDMOS Transistor