AFM907N Overview
NXP Semiconductors Technical Data RF Power LDMOS Transistor High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET Designed for handheld two--way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device make it ideal for large--signal, mon--source amplifier applications in handheld radio equipment. Measured in 350 520 MHz UHF broadband reference...
AFM907N Key Features
- Characterized for operation from 136 to 941 MHz
- Unmatched input and output allowing wide frequency range utilization
- Integrated ESD protection
- Integrated stability enhancements
- Wideband
- full power across the band
- Exceptional thermal performance
- Extreme ruggedness
- High linearity for: TETRA, SSB
AFM907N Applications
- full power across the band Exceptional thermal performance Extreme ruggedness High linearity for: TETRA, SSB