AFM906N Datasheet (NXP) - RF Power LDMOS Transistor

AFM906N, RF Power LDMOS Transistor

NXP Semiconductors Technical Data RF Power LDMOS Transistor High Ruggedness N Channel Enhancement Mode Lateral MOSFET Designed for handheld two way radio applications with frequencies from 136 to 941 MHz.

The high gain, ruggedness and wideband performance of this device make it ideal for large signal, common source amplifier applications in handheld radio equipment.

Wideband Performance (In 440 520 MHz reference circuit, 7.5 Vdc, TA = 25C, CW)

AFM906N Features

* Characterized for operation from 136 to 941 MHz

* Unmatched input and output allowing wide frequency range utilization

* Integrated ESD protection

* Integrated stability enhancements

* Wideband

* full power across the band

* Exceptional thermal performance

* Ext