A5M20TG042 Key Features
- 3-stage module solution that includes a 2-stage LDMOS integrated circuit as a driver and a GaN final stage amplifier
- Advanced high performance in-package Doherty
- Fully matched (50 ohm input/output, DC blocked)
- Reduced memory effects for improved linearized error vector magnitude
- Simultaneous dual band operation (B3-B1/B66)
- Typical LTE performance