A5M36SG239 Datasheet Airfast Power Amplifier Module

Manufacturer: NXP Semiconductors

A5M36SG239 airfast power amplifier module by NXP Semiconductors - Datasheet Preview

Datasheet Details

Part number	A5M36SG239
Manufacturer	NXP Semiconductors
File Size	1.43 MB
Description	Airfast Power Amplifier Module
Datasheet	A5M36SG239 Datasheet

General Description

The A5M36SG239 is a fully integrated Doherty power amplifier module designed for wireless infrastructure applications that demand high performance in the smallest footprint.

Ideal for applications in massive MIMO systems, outdoor small cells and low power remote radio heads.

The field-proven LDMOS and GaN power amplifiers are designed for TDD LTE and 5G systems.

Overview

A5M36SG239 Airfast Power Amplifier Module with Autobias Control Rev.

Key Features

2-stage module solution that includes an LDMOS integrated circuit as a driver and a GaN final stage amplifier.
Advanced high performance in-package Doherty.
Fully matched (50 ohm input/output, DC blocked).
Designed for low complexity digital linearization systems.
Reduced memory effects for improved linearized error vector magnitude.
Autobias on power up.
Temperature sensing.
Digital interface (I2C or SPI).
Embedde.

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