TIP111 datasheet, transistor equivalent, NTE

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Features and benefits

D High DC Current Gain: hFE = 2500 (Typ) at IC = 1A D Collector−Emitter Sustaining Voltage: VCEO(sus) = 80V (Min) at IC = 30mA D Low Collector−Emitter Saturation Voltage.

Application

Features: D High DC Current Gain: hFE = 2500 (Typ) at IC = 1A D Collector−Emitter Sustaining Voltage: VCEO(sus) = 80V (.

Description

The TIP111 is a silicon NPN Darlington transistor in a TO−220 type package designed for general purpose amplifier and low−speed switching applications. Features: D High DC Current Gain: hFE = 2500 (Typ) at IC = 1A D Collector−Emitter Sustaining Volt.

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