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TIP110 - Silicon NPN Transistor

Features

  • High DC Current Gain.
  • hFE = 2500 (Typ) @ IC = 1.0 Adc.
  • Collector.
  • Emitter Sustaining Voltage.
  • @ 30 mAdc VCEO(sus) = 60 Vdc (Min).
  • TIP110, TIP115 = 80 Vdc (Min).
  • TIP111, TIP116 = 100 Vdc (Min).
  • TIP112, TIP117.
  • Low Collector.
  • Emitter Saturation Voltage.
  • VCE(sat) = 2.5 Vdc (Max) @ IC = 2.0 Adc.
  • Monolithic Construction with Built.
  • in Base.
  • Emitter Shunt Resistors.
  • Pb.

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Datasheet Details

Part number TIP110
Manufacturer onsemi
File Size 286.92 KB
Description Silicon NPN Transistor
Datasheet download datasheet TIP110 Datasheet

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Other Datasheets by onsemi

Part Number Description
TIP111 Silicon NPN Transistor
TIP112 Silicon NPN Transistor
TIP115 Silicon PNP Transistor
TIP116 Silicon PNP Transistor
TIP117 Silicon PNP Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Plastic Medium-Power Complementary Silicon Transistors TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP) Designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 1.0 Adc • Collector−Emitter Sustaining Voltage − @ 30 mAdc VCEO(sus) = 60 Vdc (Min) − TIP110, TIP115 = 80 Vdc (Min) − TIP111, TIP116 = 100 Vdc (Min) − TIP112, TIP117 • Low Collector−Emitter Saturation Voltage − VCE(sat) = 2.5 Vdc (Max) @ IC = 2.0 Adc • Monolithic Construction with Built−in Base−Emitter Shunt Resistors • Pb−Free Packages are Available*− DATA SHEET www.onsemi.com 4 1 23 1. Base 2. Collector 3. Emitter 4.
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