NTE488 transistor equivalent, silicon npn transistor.
D High Power Gain: Gpe ≥ 10.7dB @ VCC = 13.5V, PO = 3.5W, f = 175MHz D TO39 Metal Sealed Package for High Reliability D Emitter Electrode is Connected Electrically to th.
Features: D High Power Gain: Gpe ≥ 10.7dB @ VCC = 13.5V, PO = 3.5W, f = 175MHz D TO39 Metal Sealed Package for High Rel.
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