NTE477 Datasheet, NTE

NTE477 transistor equivalent, silicon npn transistor.

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Features and benefits

D High power gain: Gpe ≥ 8.2dB @ VCC = 13.5V; VO = 40W; t = 175MHz D Emitter ballasted construction and gold metallization for high reliability, and good performances D .

Application

Features: D High power gain: Gpe ≥ 8.2dB @ VCC = 13.5V; VO = 40W; t = 175MHz D Emitter ballasted construction and gold .

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