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NTE2913 - N-Channel MOSFET

General Description

S The NTE2913 Power MOSFET utilizes advanced processing techniques to achieve extremely low on

resistance per silicon area.

Key Features

  • D D Advanced Process Technology D Ultra Low On.
  • Resistance D Dynamic dv/dt Rating D +1755C Operating Temperature D Fast Switching G D Fully Avalanche Rated.

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Datasheet Details

Part number NTE2913
Manufacturer NTE Electronics (defunct)
File Size 75.07 KB
Description N-Channel MOSFET
Datasheet download datasheet NTE2913 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NTE2913 MOSFET N−Ch, Enhancement Mode High Speed Switch TO247 Type Package Features: D D Advanced Process Technology D Ultra Low On−Resistance D Dynamic dv/dt Rating D +1755C Operating Temperature D Fast Switching G D Fully Avalanche Rated Description: S The NTE2913 Power MOSFET utilizes advanced processing techniques to achieve extremely low on−resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO247 package is preferred for commercial−industrial applications where higher power levels preclude the use of TO220 devices.