NTE2913 mosfet equivalent, n-channel mosfet.
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D Advanced Process Technology
D Ultra Low On−Resistance
D Dynamic dv/dt Rating
D +1755C Operating Temperature D Fast Switching
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D Fully Avalanche Rated Descrip.
The TO247 package is preferred for commercial−industrial applications where higher power levels preclude the use of TO.
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The NTE2913 Power MOSFET utilizes advanced processing techniques to achieve extremely low
on−resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized
device design provides the designer with an extremely.
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