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NTE264 - Silicon Complementary Transistors

Download the NTE264 datasheet PDF. This datasheet also covers the NTE263 variant, as both devices belong to the same silicon complementary transistors family and are provided as variant models within a single manufacturer datasheet.

General Description

The NTE263 (NPN) and NTE264 (PNP) are complementary silicon Darlington power transistors in a TO220 type package designed for general purpose amplifier and low

speed switching applications.

Key Features

  • D High DC Current Gain: hFE = 2500 Typ (NTE263) = 3500 Typ (NTE264) D Collector.
  • Emitter Sustaining Voltage: VCEO(sus) = 100V Min D Low Collector.
  • Emitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 5A D Monolithic Construction with Built.
  • In Base.
  • Emitter Shunt Resistor Absolute Maximum Ratings: Collector.
  • Emitter Voltage, VCEO.
  • . . . 100V Collector.
  • Base Voltage,.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (NTE263_NTEElectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number NTE264
Manufacturer NTE Electronics (defunct)
File Size 24.89 KB
Description Silicon Complementary Transistors
Datasheet download datasheet NTE264 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
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NTE2662 Silicon NPN Transistor High Frequency NTE Electronics
NTE2665 Silicon NPN Transistor Horizontal Deflection Output NTE Electronics
NTE2668 Silicon NPN Transistor High Current Switching NTE Electronics
NTE2000 (NTExxxx) Linear Integrated Circuits NTE Electronics

Other Datasheets by NTE Electronics (defunct)

Part Number Description
NTE2640 Silicon NPN Transistor
NTE2641 Silicon NPN Transistor
NTE2642 Silicon NPN Transistor
NTE2643 Silicon NPN Transistor
NTE26 Silicon NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
NTE263 (NPN) & NTE264 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE263 (NPN) and NTE264 (PNP) are complementary silicon Darlington power transistors in a TO220 type package designed for general purpose amplifier and low–speed switching applications. Features: D High DC Current Gain: hFE = 2500 Typ (NTE263) = 3500 Typ (NTE264) D Collector–Emitter Sustaining Voltage: VCEO(sus) = 100V Min D Low Collector–Emitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 5A D Monolithic Construction with Built–In Base–Emitter Shunt Resistor Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector–Base Voltage, VCB . . . . . . . . . . . . . . . .