NTE261 - Silicon Complementary Transistors

Name: NTE261
SKU: NTE261-464039

NTE

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Datasheet Details

Part number	NTE261
Manufacturer	NTE
File Size	24.86 KB
Description	Silicon Complementary Transistors
Datasheet	NTE261_NTEElectronics.pdf

NTE261 Product details

Description

The NTE261 (NPN) and NTE262 (PNP) are complementary silicon Darlington power transistors in a TO220 type package designed for general purpose amplifier and low speed switching applications.

Features

D High DC Current Gain: hFE = 2500 Typ @ IC = 4A D Collector.
Emitter Sustaining Voltage: VCEO(sus) = 100V Min @ 100mA D Low Collector.
Emitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 3A = 4V Max @ IC = 5A D Monolithic Construction with Built.
In Base.
Emitter Shunt Resistor Absolute Maximum Ratings: Collector.
Emitter Voltage, VCEO.
. . . 100V Collector.
Base.

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Other Datasheets by NTE

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Published: May 9, 2005 |