D High DC Current Gain: hFE = 2000 (Typ) @ IC = 2A D Monolithic Construction with Built
  –In Base
  –Emitter Resistors to Limit Leakage Multip.

Features: D High DC Current Gain: hFE = 2000 (Typ) @ IC = 2A D Monolithic Construction with Built
  –In B.

The NTE253 (NPN) and NTE254 (PNP) are silicon complementary Darlington transistors in a TO126 type case designed for general
  –purpose amplifier and low
  –speed switching applications. Features: D High DC Current Gain: h.

NTE25

NTE250

NTE2501

NTE2502

NTE2503

NTE2504

NTE2505

NTE2506

NTE2507

NTE2508

NTE2509

NTE251

NTE2510

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