NTE250
Description
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The NTE249 (NPN) and NTE250 (PNP) are silicon plementary Darlington transistors in a TO3 type case designed for use as output devices in plementary general purpose amplifier applications.
Features
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D High DC Current Gain: h FE = 3500 Typ @ IC = 10A D Monolithic Construction with Built- In Base- Emitter Shunt Resistors
Absolute Maximum Ratings:
Collector- Emitter Voltage, VCEO
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- - . . . 100V Collector- Base Voltage, VCB
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- . 100V Emitter- Base Voltage, VEB
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- . . . . 5V Collector Current, IC
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- - . . . . 16A Base Current, IB
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