NTE250 transistors equivalent, silicon complementary transistors.
D High DC Current Gain: hFE = 3500 Typ @ IC = 10A D Monolithic Construction with Built
–In Base
–Emitter Shunt Resistors
Absolute Maximum .
Features:
D High DC Current Gain: hFE = 3500 Typ @ IC = 10A D Monolithic Construction with Built
–In Ba.
The NTE249 (NPN) and NTE250 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for use as output devices in complementary general purpose amplifier applications.
Features:
D High DC Current Gain: hFE = 3500 Typ @ IC .
Image gallery
TAGS
Download (Size : 25.18KB)