NTE248 transistors equivalent, silicon complementary transistors.
D High DC Current Gain: hFE = 3500 Typ @ IC = 5A D Collector
–Emitter Sustaining Voltage: VCEO(sus) = 100V Min @ 100mA D Monolithic Construction with Buil.
Features:
D High DC Current Gain: hFE = 3500 Typ @ IC = 5A D Collector
–Emitter Sustaining Voltage: VCE.
The NTE247 (NPN) and NTE248 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for general
–purpose amplifier and low
–frequency switching applications.
Features:
D High DC Current Gain:.
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