NTE240 transistors equivalent, silicon complementary transistors.
D High Collector
–Emitter Breakdown Voltage: V(BR)CEO = 300V (Min) @ IC = 1mA D Low Collector
–Emitter Saturation Voltage: VCE(sat) = 0.75V.
The NTE191 (NPN) and NTE240 (PNP) are silicon complementary transistors in a TO202N type package designed for high
–voltage video and luminance output stages in TV receivers.
Features:
D High Collector
–Emitter Breakdo.
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