Datasheet4U Logo Datasheet4U.com

NTE246 - Silicon Complementary Transistors

This page provides the datasheet information for the NTE246, a member of the NTE245 Silicon Complementary Transistors family.

Datasheet Summary

Description

The NTE245 (NPN) and NTE246 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for use as output devices in general purpose amplifier applications.

Features

  • D High DC Current Gain: hFE = 4000 Typ @ IC = 5A D Monolithic Construction with Built.
  • In Base.
  • Emitter Shunt Resistors Absolute Maximum Ratings: Collector.
  • Emitter Voltage, VCEO.
  • . . . . 80V Collector.
  • Base Voltage, VCB.
  • . . 80V Emitter.
  • Base Voltage, VEB.

📥 Download Datasheet

Datasheet preview – NTE246

Datasheet Details

Part number NTE246
Manufacturer NTE
File Size 25.07 KB
Description Silicon Complementary Transistors
Datasheet download datasheet NTE246 Datasheet
Additional preview pages of the NTE246 datasheet.
Other Datasheets by NTE

Full PDF Text Transcription

Click to expand full text
NTE245 (NPN) & NTE246 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE245 (NPN) and NTE246 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for use as output devices in general purpose amplifier applications. Features: D High DC Current Gain: hFE = 4000 Typ @ IC = 5A D Monolithic Construction with Built–In Base–Emitter Shunt Resistors Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . .
Published: |