NTE240 Datasheet - NTE

NTE240 Silicon Complementary Transistors

NTE240 Features

* D High Collector

* Emitter Breakdown Voltage: V(BR)CEO = 300V (Min) @ IC = 1mA D Low Collector

* Emitter Saturation Voltage: VCE(sat) = 0.75V (Max) @ IC = 30mA D Low Collector

* Base Capacitance: Ccb = 3pF (Max) @ VCB = 20V Absolute Maximum Ratings: Collector

* Emitter Volt

Datasheet Details

NTE240

NTE

23.92 KB

Silicon complementary transistors.

📁 Related Datasheet

NTE24 Silicon Complementary Transistors (NTE)

NTE2401 Silicon PNP Transistor (NTE)

NTE2402 Silicon Complementary Transistors (NTE)

NTE2403 Silicon Complementary Transistors (NTE)

NTE2404 Silicon Complementary Transistors (NTE)

NTE2405 Silicon Complementary Transistors (NTE)

NTE2406 Silicon NPN Transistor (NTE)

NTE2407 Silicon PNP Transistor (NTE)

TAGS

NTE240 Silicon Complementary Transistors NTE

NTE240 Distributor