D Low Collector
  –Emitter Saturation Voltage: VCE(sat) = 200mV Max @ IC = 24mA D High Emitter
  –Base Breakdown Voltage: V(BR)EBO = 12V Min @ .

Features: D Low Collector
  –Emitter Saturation Voltage: VCE(sat) = 200mV Max @ IC = 24mA D High Emitter<.

The NTE102 (PNP) and NTE103 (NPN) are Germanium complementary transistors designed for medium
  –speed saturated switching applications. Features: D Low Collector
  –Emitter Saturation Voltage: VCE(sat) = 200mV Max @ IC = .

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