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NTE10 - Silicon NPN Transistor UHF Low Noise Wide.Band Amplifier

Key Features

  • D Low Noise Figure: NF = 2.2dB Typ (f = 0.9GHz) D High Power Gain: MAG = 14dB Typ (f = 0.9GHz) D High Cutoff Frequency: fT = 5GHz Typ Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector.
  • Base Voltage, VCBO.
  • 20V Collector.
  • Emitter Voltage, VCER.
  • . . . . 12V Emitter.
  • B.

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Datasheet Details

Part number NTE10
Manufacturer NTE Electronics (defunct)
File Size 20.68 KB
Description Silicon NPN Transistor UHF Low Noise Wide.Band Amplifier
Datasheet download datasheet NTE10 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NTE10 Silicon NPN Transistor UHF Low Noise Wide–Band Amplifier Features: D Low Noise Figure: NF = 2.2dB Typ (f = 0.9GHz) D High Power Gain: MAG = 14dB Typ (f = 0.9GHz) D High Cutoff Frequency: fT = 5GHz Typ Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Collector–Emitter Voltage, VCER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .