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NTE

2N5320 Datasheet Preview

2N5320 Datasheet

Silicon NPN Transistor

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2N5320
Silicon NPN Transistor
High Current, General Purpose
TO39 Type Package
Absolute Maximum Ratings:
CollectorEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V
CollectorBase Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
EmitterBase Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Total
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. . . . . . . 10W
0.057mW/C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65to +200C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65to +200C
Thermal Resistance, JunctiontoCase, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17.5C/W
Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF Characteristics
CollectorEmitter Breakdown Voltage
Collector Cutoff Current
V(BR)CEO)
ICEX
IC = 100mA, IB = 0
VCE = 100V, VBE = 1.5V
VCE = 70V, VBE = 1.5V, TC = +150C
75
−−V
0.1 mA
5.0 mA
Emitter Cutoff Current
ON Characteristics (Note 1)
IEBO VBE = 7V, IC = 0
− − 0.1 mA
DC Current Gain
hFE IC = 500mA, VCE = 4V
IC = 1A, VCE = 2V
30 130
10
CollectorEmitter Saturation Voltage
BaseEmitter ON Voltage
SmallSignal Characteristics
VCE(sat) IC = 500mA, IB = 50mA
VBE(on) IC = 500mA, VCE = 4V
− − 0.5 V
− − 1.1 V
SmallSignal Current Gain
Switching Characteristics
hfe IC = 50mA, VCE = 4V, f = 10MHz
5−−
TurnOn Time
TurnOff Time
ton VCC = 30V, IC = 500mA, IB1 = 50mA − − 80 ns
toff VIBC1C==IB320=V,5I0Cm=A500mA,
− − 800 ns
Note 1. Pulse Test: Pulse Width 300s, Duty Cycle 2%.




NTE

2N5320 Datasheet Preview

2N5320 Datasheet

Silicon NPN Transistor

No Preview Available !

.260
(6.6)
Max
.500
(12.7)
Min
.370 (9.39) Dia Max
.355 (9.03) Dia Max
Emitter
.018 (0.45)
Base
Collector/Case
45
.031 (.793)


Part Number 2N5320
Description Silicon NPN Transistor
Maker NTE
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2N5320 Datasheet PDF






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