2N5303 Datasheet, NTE

D High Collector−Emitter Sustaining Voltage: VCEO(sus) = 40V (Min) @ IC = 200mA (2N5301) VCEO(sus) = 80V (Min) @ IC = 200mA (2N5303) D Low Collector−Emitter Saturation V.

. Features: D High Collector−Emitter Sustaining Voltage: VCEO(sus) = 40V (Min) @ IC = 200mA (2N5301) VCEO(sus) = 80V (Mi.

The 2N5301 and 2N5303 are silicon NPN transistors in a TO−3 type case designed for use in power amplifier and switching circuits applications.. Features: D High Collector−Emitter Sustaining Voltage: VCEO(sus) = 40V (Min) @ IC = 200mA (2N5301) VCEO(s.

2N5301

2N5302

2N5304

2N5305

2N5306

2N5306A

2N5307

2N5308

2N5312

2N5313

2N5314

2N5315

2N5316