2N5301 transistor equivalent, silicon npn transistor.
D High Collector−Emitter Sustaining Voltage:
VCEO(sus) = 40V (Min) @ IC = 200mA (2N5301) VCEO(sus) = 80V (Min) @ IC = 200mA (2N5303) D Low Collector−Emitter Saturation V.
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Features: D High Collector−Emitter Sustaining Voltage:
VCEO(sus) = 40V (Min) @ IC = 200mA (2N5301) VCEO(sus) = 80V (Mi.
The 2N5301 and 2N5303 are silicon NPN transistors in a TO−3 type case designed for use in power amplifier and switching circuits applications..
Features: D High Collector−Emitter Sustaining Voltage:
VCEO(sus) = 40V (Min) @ IC = 200mA (2N5301) VCEO(s.
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