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KSD5076 NJS Silicon NPN Power Transistor

Description • High Breakdown Voltage- :VCBO= 1500V (Min) • High Switching Speed • High Reliability APPLICATIONS • Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V Ic Collector Current- Continuous 5 A ICP Collector Current-...
Features .00 0 4.90 5.10 R 3.75 3.95 S 3.20 3,40 U 9.90 10.10 V 4.70 4,90 z 1.90 2.10 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However. NJ Semi-Conductors ass...

Datasheet PDF File KSD5076 Datasheet - 61.02KB

KSD5076  






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