Datasheet Summary
Cs l
, Una.
TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960
20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A.
PowerMOS Transistor
GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and DC/AC converters, and in general purpose switching applications. QUICK REFERENCE DATA SYMBOL PARAMETER Drain-source voltage Drain current (d.c.) Total power dissipation Drain-source on-state resistance
VDS ID ptot
RDS(ON)
MAX. 1000 5,1 125 2,0
UNIT
V A W n
MECHANICAL DATA Dimensions in mm Net mass: 12 g Pinning: 1
- Gate 2 » Drain 3...
