PR802BA33 Features
* Halogen Free and RoHS compliant.
* Low RDS(on) to Minimize Conduction Losses.
* Ohmic Region Good RDS(on) Ratio.
* Optimized Gate Charge to Minimize Switching Losses.
* 100% UIS Tested & 100% Rg Tested.
* Patent No. US9,947,551. D G S PR802BA33 Pow
Datasheet Details
PR802BA33, PR802BA33-NIKO
NIKO-SEM
330.08 KB
N-channel enhancement mode field effect transistor.
This datasheet PDF includes multiple part numbers: PR802BA33, PR802BA33-NIKO.
Please refer to the document for exact specifications by model.
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PR802BA33 Distributor
