900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






NIKO-SEM

PKCH2BB Datasheet Preview

PKCH2BB Datasheet

N-Channel MOSFET

No Preview Available !

NIKO-SEM
N-Channel Enhancement Mode
Field Effect Transistor
PKCH2BB
PDFN 5x6P
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 0.99mΩ
ID4
229A
Features
• PbFree, Halogen Free and RoHS compliant.
• Low RDS(on) to Minimize Conduction Losses.
• Ohmic Region Good RDS(on) Ratio.
• Optimized Gate Charge to Minimize Switching Losses.
Applications
• Protection Circuits Applications.
• Computer for DC to DC Converters Applications.
D
G
S
D D DD
#1 S S S G
G. GATE
D. DRAIN
S. SOURCE
100% UIS Tested
100% Rg Tested
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current4
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Continuous Drain Current
Avalanche Current
TA = 25 °C
TA = 70 °C
Avalanche Energy
L = 0.1mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Power Dissipation3
TA = 25 °C
TA = 70 °C
Operating Junction & Storage Temperature Range
VDS
VGS
ID
IDM
ID
IAS
EAS
PD
PD
Tj, Tstg
LIMITS
30
±20
228
145
350
50
40
86
369.8
104
41
5
3.2
-55 to 150
UNITS
V
V
A
mJ
W
W
°C
REV 1.0
1
G-37-1




NIKO-SEM

PKCH2BB Datasheet Preview

PKCH2BB Datasheet

N-Channel MOSFET

No Preview Available !

NIKO-SEM
N-Channel Enhancement Mode
Field Effect Transistor
PKCH2BB
PDFN 5x6P
Halogen-Free & Lead-Free
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
UNITS
Junction-to-Ambient2
Junction-to-Ambient2
t 10s
Steady-State
RJA
RJA
25
40 °C / W
Junction-to-Case
Steady-State
RJC
1.2
1Pulse width limited by maximum junction temperature.
2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
3The Power dissipation is based on RJA t 10s value.
4The maximum current rating is package limited.
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State
Resistance1
Forward Transconductance1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
STATIC
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
gfs
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
VDS = 0V, VGS = ±20V
VDS = 24V, VGS = 0V
VDS = 20V, VGS = 0V, TJ = 55 °C
VGS = 4.5V, ID = 20A
VGS = 10V, ID = 20A
VDS = 5V, ID = 20A
DYNAMIC
Ciss
Coss
Crss
Rg
VGS = 0V, VDS = 15V, f = 1MHz
VGS = 0V, VDS = 0V, f = 1MHz
VGS = 10V
Qg
VGS = 4.5V
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 15V , VGS = 10V,
ID = 20A
VDS = 15V ,
ID 20A, VGS = 10V, RGEN =6Ω
LIMITS
MIN TYP MAX
UNIT
30
1.35 1.8 2.35
V
±100 nA
1
10 A
1.2 1.5
mΩ
0.85 0.99
123 S
6151
1052
693
1.7
128
65
19.7
24
27
49
171
90
pF
Ω
nC
nS
REV 1.0
2
G-37-1


Part Number PKCH2BB
Description N-Channel MOSFET
Maker NIKO-SEM
PDF Download

PKCH2BB Datasheet PDF






Similar Datasheet

1 PKCH2BB N-Channel MOSFET
NIKO-SEM
2 PKCH2BB MOSFET
UNIKC





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy