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NIKO-SEM

PK650BA Datasheet Preview

PK650BA Datasheet

N-Channel MOSFET

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NIKO-SEM
N-Channel Enhancement Mode
Field Effect Transistor
PK650BA
PDFN 5x6P
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 3.3mΩ
ID
70A
D
G
S
D DDD
#1 S S S G
G. GATE
D. DRAIN
S. SOURCE
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current2
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Continuous Drain Current
TA = 25 °C
TA = 70 °C
Avalanche Current
Avalanche Energy
L = 0.1mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Power Dissipation
TA = 25 °C
TA = 70 °C
Operating Junction & Storage Temperature Range
VDS
VGS
ID
IDM
ID
IAS
EAS
PD
PD
Tj, Tstg
LIMITS
30
±20
70
44.6
100
19
15
37
68
31
12.5
2.4
1.5
-55 to 150
UNITS
V
V
A
mJ
W
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
UNITS
Junction-to-Ambient3
Junction-to-Case
RJA
RJC
52
°C / W
4
1Pulse width limited by maximum junction temperature.
2Package limitation current is 35A.
3The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
REV1.0
1
D-42-5




NIKO-SEM

PK650BA Datasheet Preview

PK650BA Datasheet

N-Channel MOSFET

No Preview Available !

NIKO-SEM
N-Channel Enhancement Mode
Field Effect Transistor
PK650BA
PDFN 5x6P
Halogen-Free & Lead-Free
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
LIMITS
UNIT
MIN TYP MAX
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State
Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
gfs
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
VDS = 0V, VGS = ±20V
VDS = 24V, VGS = 0V
VDS = 20V, VGS = 0V, TJ = 55 °C
VGS = 4.5V, ID = 15A
VGS = 10V, ID = 19A
VDS = 5V, ID = 19A
DYNAMIC
30
1.3 1.7
2.3
V
±100 nA
1
A
10
3.6 4.4
mΩ
2.7 3.3
60 S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Ciss
Coss
Crss
Rg
VGS = 0V, VDS = 15V, f = 1MHz
VGS = 0V, VDS = 0V, f = 1MHz
1741
311
198
1.23
pF
Ω
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
VGS = 10V
Qg
VGS = 4.5V
Qgs
VDS = 15V , VGS = 10V,
ID = 19A
Qgd
td(on)
tr
td(off)
tf
VDS = 15V ,
ID 19A, VGS = 10V, RGEN =6Ω
35
19
5
9
23
10
40
10
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
Forward Voltage1
IS
VSD IF = 19A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
IF = 19A, dlF/dt = 100A / S
Qrr
1Pulse test : Pulse Width 300 sec, Duty Cycle 2.
2Independent of operating temperature.
20.4
8.1
25.8
1.2
nC
nS
A
V
nS
nC
REV1.0
2
D-42-5


Part Number PK650BA
Description N-Channel MOSFET
Maker NIKO-SEM
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PK650BA Datasheet PDF






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