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P8010BT - N-Channel Transistor

Download the P8010BT datasheet PDF. This datasheet also covers the P8010BT-NIKO variant, as both devices belong to the same n-channel transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (P8010BT-NIKO-SEM.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number P8010BT
Manufacturer NIKO-SEM
File Size 295.56 KB
Description N-Channel Transistor
Datasheet download datasheet P8010BT Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
P8010BT N-Channel MOSFET UNIKC
P8010BTF N-Channel MOSFET UNIKC
P8010BD N-Channel Transistor UNIKC
P8010BIS N-Channel MOSFET UNIKC
P8010BV N-Channel MOSFET UNIKC

Other Datasheets by NIKO-SEM

Part Number Description
P8010BTF N-Channel Transistor
P8010BD N-Channel Transistor
P8010BI N-Channel Enhancement Mode Field Effect Transistor
P8010BIS N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
NIKO-SEM N-Channel Enhancement Mode P8010BT Field Effect Transistor TO-220 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 85mΩ ID 17A D G S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 Avalanche Current Avalanche Energy2 Power Dissipation Junction & Storage Temperature Range TC = 25 °C TC = 100 °C TC = 25 °C TC = 100 °C VDS VGS ID IDM IAS EAS PD TJ, Tstg THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction-to-Case RJC Junction-to-Case 1Pulse width limited by maximum junction temperature. 2Starting Tj =25 °C,L=0.1mH,VDD=50V TYPICAL 1. GATE 2. DRAIN 3. SOURCE LIMITS 100 ±20 17 10 35 13 8.
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