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P2806ATF - N-Channel Transistor

Download the P2806ATF datasheet PDF. This datasheet also covers the P2806ATF-NIKO variant, as both devices belong to the same n-channel transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (P2806ATF-NIKO-SEM.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
P2806ATF N-Channel MOSFET UNIKC
P2806AT N-Channel MOSFET UNIKC
P2806BD N-Channel MOSFET UNIKC
P2806BV N-Channel MOSFET UNIKC
P2806HV N-Channel MOSFET UNIKC

Other Datasheets by NIKO-SEM

Part Number Description
P2806AT N-Channel Transistor
P2806BD N-Channel MOSFET
P2803NVG N-&P-Channel MOSFET
P2804BDG N-Channel MOSFET
P2804BVG N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NIKO-SEM N-Channel Enhancement Mode P2806ATF Field Effect Transistor TO-220F Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 30mΩ ID 27A D G 1. GATE 2. DRAIN 3. SOURCE 1 23 S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy L = 0.1mH Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range VGS ID IDM IAS EAS PD Tj, Tstg LIMITS ±20 27 17 105 29 41 40 16 -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction-to-Case RθJC Junction-to-Ambient RθJA 1Pulse width limited by maximum junction temperature.
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