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P2806AT - N-Channel Transistor

Download the P2806AT datasheet PDF. This datasheet also covers the P2806AT-NIKO variant, as both devices belong to the same n-channel transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (P2806AT-NIKO-SEM.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number P2806AT
Manufacturer NIKO-SEM
File Size 185.85 KB
Description N-Channel Transistor
Datasheet download datasheet P2806AT Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
P2806AT N-Channel MOSFET UNIKC
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P2806HV N-Channel MOSFET UNIKC

Other Datasheets by NIKO-SEM

Part Number Description
P2806ATF N-Channel Transistor
P2806BD N-Channel MOSFET
P2803NVG N-&P-Channel MOSFET
P2804BDG N-Channel MOSFET
P2804BVG N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
NIKO-SEM N-Channel Enhancement Mode P2806AT Field Effect Transistor TO-220 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 30mΩ ID 34A D G 1. GATE 2. DRAIN 3. SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy L = 0.1mH Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range VGS ID IDM IAS EAS PD Tj, Tstg LIMITS ±20 34 21 110 29 41 58 23 -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction-to-Case RθJC Junction-to-Ambient RθJA 1Pulse width limited by maximum junction temperature.
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